Toshiba, Ibm, And Amd Develop World’s Smallest Functional Static Random Access Memory Cell

Toshiba, IBM and AMD have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (?m2), the world’s smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs). The cell, developed with a high-k/metal gate (HKMG) material, offers advantages over planar-FET cells for future technology generations. SRAM cells are circuit components in most systems-level, large-scale integrated circuits such as microprocessors, and smaller SRAM cells can help provide smaller, faster processors that consume less power .

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